Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires
نویسندگان
چکیده
منابع مشابه
Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires
Reversible and drastic modulation of the transport properties in vanadium dioxide (VO2) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowed us to investigate behavior of revealed hydrogen intercalation and diffusion aspects with time and...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2015
ISSN: 2045-2322
DOI: 10.1038/srep17080